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A novel approach to characterization of progressive breakdown in high-k/metal gate stacks
- Source :
- Microelectronics Reliability. 48:1759-1764
- Publication Year :
- 2008
- Publisher :
- Elsevier BV, 2008.
-
Abstract
- Dielectric breakdown (BD) of nFETs with TiN metal gates and HfO 2 /interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for extraction of the PBD time and its dependence on gate voltage are reported.
- Subjects :
- Materials science
Dielectric strength
business.industry
Electrical engineering
chemistry.chemical_element
Condensed Matter Physics
Gate voltage
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Characterization (materials science)
Metal
chemistry
visual_art
visual_art.visual_art_medium
Optoelectronics
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
business
Tin
Layer (electronics)
High-κ dielectric
Subjects
Details
- ISSN :
- 00262714
- Volume :
- 48
- Database :
- OpenAIRE
- Journal :
- Microelectronics Reliability
- Accession number :
- edsair.doi...........1fac6aa10a7b5452993703b6e0415f36
- Full Text :
- https://doi.org/10.1016/j.microrel.2008.07.071