Threshold voltage modulation in monolayer MoS2 field-effect transistors via selective gallium ion beam irradiation

Electronic regulation of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is a crucial step towards next-generation optoelectronics and electronics. Here, we demonstrate controllable and selective-area defect engineering in 2D molybdenum disulfide (MoS2) using a focused ion beam with a low-energy gallium ion (Ga+) source. We find that the surface defects of MoS2 can be tuned by the precise control of ion energy and dose. Furthermore, the field-effect transistors based on the monolayer MoS2 show a significant threshold voltage modulation over 70 V after Ga+ irradiation. First-principles calculations reveal that the Ga impurities in the monolayer MoS2 introduce a defect state near the Fermi level, leading to a shallow acceptor level of 0.25 eV above the valence band maximum. This defect engineering strategy enables direct writing of complex pattern at the atomic length scale in a controlled and facile manner, tailoring the electronic properties of 2D TMDCs for novel devices.