A Model Parameter Extraction Methodology Including Time-Dependent Variability for Circuit Reliability Simulation

In current CMOS advanced technology nodes, accurate extraction of transistor parameters affected by time-dependent variability, like threshold voltage (Vth) and mobility (μ), has become a critical issue for both analog and digital circuit simulation. In this work, a precise VTH0 and U0 BSIM parameters extraction methodology is presented, together with a straightforward IDS to VTH0 shift conversion, to allow the complete study of device aging effects for reliability circuit simulation.