Back to Search
Start Over
A study of the oxygen precipitation kinetics in zirconium-doped silicon
- Source :
- Technical Physics Letters. 28:962-963
- Publication Year :
- 2002
- Publisher :
- Pleiades Publishing Ltd, 2002.
-
Abstract
- The kinetics of oxygen precipitation at 900 and 1050°C was studied in Czochralski-grown silicon single crystals doped to various levels with zirconium. It is established that zirconium, while not participating in the nucleation of oxygen precipitates, decreases the concentration of interstitial oxygen in the crystals.
Details
- ISSN :
- 10906533 and 10637850
- Volume :
- 28
- Database :
- OpenAIRE
- Journal :
- Technical Physics Letters
- Accession number :
- edsair.doi...........2601f6f951aab80dba858cc76d329e5c
- Full Text :
- https://doi.org/10.1134/1.1526897