Frequency dependence of the second derivative of the currant-voltage characteristic of the heterostructure SnO/sub 2/-Si at the gas adsorption

Authors :: V. V. Il’chenko
V. T. Grinchenko
V. P. Chehun
V.V. Telega
A. M. Gaskov
A. I. Kravchenko
Source :: Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498).
Publication Year :: 2004
Publisher :: IEEE, 2004.
Abstract: The opportunity of use nanostructural heterostructure n-SnO/sub 2/(Ni)/p-Si as a gas sensitivity element is investigated. The second derivative of the current-voltage characteristic of the heterostructure under influence of changes of gas environment and temperature were studied.

Subjects :: Semiconductor thin films
Materials science
Silicon
Analytical chemistry
chemistry.chemical_element
Heterojunction
Frequency dependence
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter::Materials Science
Adsorption
chemistry
Current (fluid)
Second derivative
Voltage

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