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Frequency dependence of the second derivative of the currant-voltage characteristic of the heterostructure SnO/sub 2/-Si at the gas adsorption
- Source :
- Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498).
- Publication Year :
- 2004
- Publisher :
- IEEE, 2004.
-
Abstract
- The opportunity of use nanostructural heterostructure n-SnO/sub 2/(Ni)/p-Si as a gas sensitivity element is investigated. The second derivative of the current-voltage characteristic of the heterostructure under influence of changes of gas environment and temperature were studied.
- Subjects :
- Semiconductor thin films
Materials science
Silicon
Analytical chemistry
chemistry.chemical_element
Heterojunction
Frequency dependence
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter::Materials Science
Adsorption
chemistry
Current (fluid)
Second derivative
Voltage
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)
- Accession number :
- edsair.doi...........2713ef8059da7410c8f717436c141214