Epitaxial κ-Ga2O3/GaN heterostructure for high electron-mobility transistors

Subjects

Subjects :

Physics and Astronomy (miscellaneous)
General Materials Science
Energy (miscellaneous)

Details

ISSN :

25425293

Volume :

31

Database :

OpenAIRE

Journal :

Materials Today Physics

Accession number :

edsair.doi...........3ef725fe7f6c0fdf2d1b92edc93c443b

Full Text :

https://doi.org/10.1016/j.mtphys.2023.101002