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The C-V characteristics of TiO2/p-Si/Ag, GNR doped TiO2/p-Si/Ag and MWCNT doped TiO2/p-Si/Ag heterojunction devices
- Source :
- Chinese Journal of Physics. 64:163-173
- Publication Year :
- 2020
- Publisher :
- Elsevier BV, 2020.
-
Abstract
- The TiO2/p-Si/Ag, graphene (GNR) doped TiO2/p-Si/Ag and multi-walled carbon nanotube (MWCNT) doped TiO2/p-Si/Ag heterojunction devices were fabricated by electrospinning technique at same conditions. Their structural, morphological properties, thermal analyses (TGA), and capacitance voltage characteristics were studied and compared. The undoped, GNR and MWCNT doped TiO2 structures obtained successfully according to XRD measurements. Morphological properties of the undoped, GNR and MWCNT doped TiO2 composite structures have rod or ribbon like structures. The TGA result confirmed the GNR and MWCNT doped TiO2 structures. The C-V and G-V measurements were employed for electrical characterization of the TiO2/p-Si/Ag, GNR doped TiO2/p-Si/Ag and MWCNT doped TiO2/p-Si/Ag devices for various frequencies at room temperatures. The results imparted that the capacitance and conductance behaviors of all devices are strong functions of the frequency and voltage. The electrical parameters were calculated from C−2-V plots of the heterojunction devices and compared for three devices. The transient photocapacitance plots revealed that the devices can be employed for optical communication applications.
- Subjects :
- Materials science
business.industry
Graphene
Doping
Composite number
General Physics and Astronomy
Conductance
Heterojunction
Carbon nanotube
01 natural sciences
Capacitance
Electrospinning
010305 fluids & plasmas
law.invention
law
0103 physical sciences
Optoelectronics
010306 general physics
business
Subjects
Details
- ISSN :
- 05779073
- Volume :
- 64
- Database :
- OpenAIRE
- Journal :
- Chinese Journal of Physics
- Accession number :
- edsair.doi...........41a7b5b88359d36b81fdc1ead6019950