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Effect of annealing on photoluminescence and microstructures of InGaN/GaN multi-quantum well with Mg-doped p-type GaN
- Source :
- Chinese Physics. 14:830-833
- Publication Year :
- 2005
- Publisher :
- IOP Publishing, 2005.
-
Abstract
- InGaN/GaN multi-quantum well structure with Mg-doped p-type GaN was grown by low-pressure metalorganic vapour phase epitaxy. After rapid-thermal-annealing at 700 and 900 degrees C, both the red-shift and the blue-shift of the photoluminescence (PL) peak, the decreased and the enhancement of the PL intensity were observed. The transmission electron microscopic images showed that InGaN multi-quantum-dots-like (MQD-like) structures with dimensions less than 5×10nm were formed in InGaN wells. The changes of PL spectra could be tentatively attributed to the competition between the red-shift mechanism of the quantum-confined Stark effect and the blue-shift mechanism of the quantum size effect due to MQD-like structures.
Details
- ISSN :
- 17414199 and 10091963
- Volume :
- 14
- Database :
- OpenAIRE
- Journal :
- Chinese Physics
- Accession number :
- edsair.doi...........42adfa9da3499f2628b7a44ca9171cd9