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Charge trapping in SiO2/HfO2/TiN gate stack

Authors :
Gerard Ghibaudo
Francois Lime
Bernard Guillaumot
Source :
Microelectronics Reliability. 43:1445-1448
Publication Year :
2003
Publisher :
Elsevier BV, 2003.

Subjects

Subjects :
Materials science
business.industry
Gate stack
chemistry.chemical_element
Charge (physics)
Trapping
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
chemistry
Optoelectronics
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Tin
business

Details

ISSN :
00262714
Volume :
43
Database :
OpenAIRE
Journal :
Microelectronics Reliability
Accession number :
edsair.doi...........51d05c386b1ae4ee7a08b0ebb3222768

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