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HotCluster: A Thermal-Aware Defect Recovery Method for Through-Silicon-Vias Toward Reliable 3-D ICs Systems

Authors :
Akram Ben Ahmed
Xuan-Tu Tran
Abderazek Ben Abdallah
Khanh N. Dang
Source :
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 41:799-812
Publication Year :
2022
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2022.

Abstract

Through Silicon Via (TSV) is considered as the near-future solution to realize low-power and high-performance 3D-Integrated Circuits (3D-ICs) and 3D-Network-on-Chips (3D-NoCs). However, the lifetime reliability issue of TSV due to its fault sensitivity and the high operating temperature of 3D-ICs, which also accelerates the fault-rate, is one of the most critical challenges. Meanwhile, most current works focus on detecting and correcting TSV defects after manufacturing without considering high-temperature nodes’ impact on lifetime reliability. Besides, the recovery for defective clusters is also challenging because of costly redundancies. In this work, we present HotCluster: a hotspot-aware self-correction platform for clustering defects in 3D-NoCs to help understand and tackle this problem. We first give a method to predict normalized fault rates and place redundant TSV groups according to each region’s fault rate. In our particular medium fault-rate (normalized to the coolest area), HotCluster reduces about 60% of the redundancies in comparison to the uniformly distributed redundancies while having a higher ratio of router working in a normal state. Furthermore, HotCluster integrates both online (weight-based) and offline (max-flow min-cut offline method) mapping algorithms to help the system correct the faulty TSV clusters. The experimental results show that both the max-flow min-cut offline method and weight-based online mode with a redundancy of 0.25 exhibits less than 1% of routers disabled under 50% defect-rates.

Details

ISSN :
19374151 and 02780070
Volume :
41
Database :
OpenAIRE
Journal :
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Accession number :
edsair.doi...........5a4f9f146cf1f67cda1e3f8dbdb17a18