Rapid-thermal annealing for quantum-well heterostructure device fabrication

The authors examine ion implantation and rapid-thermal processing for the fabrication of quantum-well, compound-semiconductor heterostructure devices in strained and in lattice-matched material systems. The authors demonstrate improvements to the performance of two classes of devices that would be particularly sensitive to process-induced defects: p-channel strained-quantum-well field-effect transistors and single-quantum-well diode lasers. The authors correlated the device results with secondary-ion mass spectroscopy, Hall-effect, transmission-electron microscopy, and photoluminescence. >