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Rapid-thermal annealing for quantum-well heterostructure device fabrication
- Source :
- IEEE Transactions on Electron Devices. 39:41-49
- Publication Year :
- 1992
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1992.
-
Abstract
- The authors examine ion implantation and rapid-thermal processing for the fabrication of quantum-well, compound-semiconductor heterostructure devices in strained and in lattice-matched material systems. The authors demonstrate improvements to the performance of two classes of devices that would be particularly sensitive to process-induced defects: p-channel strained-quantum-well field-effect transistors and single-quantum-well diode lasers. The authors correlated the device results with secondary-ion mass spectroscopy, Hall-effect, transmission-electron microscopy, and photoluminescence. >
- Subjects :
- Photoluminescence
Materials science
Fabrication
Condensed Matter::Other
business.industry
Transistor
technology, industry, and agriculture
Heterojunction
Semiconductor device
equipment and supplies
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Electronic, Optical and Magnetic Materials
law.invention
Condensed Matter::Materials Science
Ion implantation
law
Optoelectronics
Field-effect transistor
Electrical and Electronic Engineering
business
Quantum well
Subjects
Details
- ISSN :
- 00189383
- Volume :
- 39
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........7c7c28a34c8f81c06abb2826502f0ace