Modelling technique utilizing modified sigmoid functions for describing power transistor device capacitances applied on GaN HEMT and silicon MOSFET

In power transistor models, it is very important that device capacitances are modelled accurately so that switching losses, EMI filter requirements and gate timing requirements of the converter can be accurately determined. In this paper, a modelling technique utilizing modified sigmoid functions to describe the device capacitances is applied on a GaN HEMT and a silicon MOSFET to develop their corresponding SPICE models. Comparison of switching energies of the transistors under slow-switching conditions suggest that the technique is suitable for modelling both types of transistors. The developed model for the GaN HEMT is also shown to simulate faster than the manufacturer's model under fast switching conditions.