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Influence of the topology on thermal dissipation in high power density GaAs devices

Authors :
J. Tasselli
J.P. Bailbe
P. Souverain
Thierry Camps
A. Marty
Source :
Solid-State Electronics. 46:1919-1924
Publication Year :
2002
Publisher :
Elsevier BV, 2002.

Abstract

This paper presents an analysis of the influence of the active zone topology on the heat dissipation for GaAs devices. It highlights the influence of the width and the form factor on the thermal behavior of the device. It also shows the sensitivity of the thermal resistance to the increase of the dissipated power. For multi-cellular structures the impact of the thermal coupling between heat sources is studied.

Details

ISSN :
00381101
Volume :
46
Database :
OpenAIRE
Journal :
Solid-State Electronics
Accession number :
edsair.doi...........8231d365306339027b595aa218e65f90
Full Text :
https://doi.org/10.1016/s0038-1101(02)00136-3