Band gap and gate metal engineering of novel hetero-material InAs/GaAs-based JLTFET for improved wireless applications

This paper investigates the reliability of a dual metal gate-hetero-material junctionless tunnel FET (DMG-HJLTFET), by using a novel combination of III–V compound semiconducting materials, $$\mathrm{InAs}$$ (lower bandgap) in the source region and $$\mathrm{GaAs}$$ (higher bandgap) in the channel and drain regions. We applied bandgap engineering and dual material gate engineering to improve the linearity metrics and distortion parameters by optimizing an appropriate lower work function tunnel gate toward the source and higher work function supplementary gate toward the drain and compared all the results with SMG (single metal gate)-HJLTFET and Si-JLTFET. The DMG-HJLTFET showed marked improvements in terms of ION, ION/IOFF, SS, $${g}_{\mathrm{m}}$$ , $${g}_{\mathrm{m}3}$$ , VIP2, VIP3, and 1-dB compression point. The input power, IIP3 of DMG-HJLTFET, is 158% greater than SMG-HJLTFET and is 154.7% greater than Si-JLTFET. The distortion power, IMD3 of DMG-HJLTFET, is 171.8% and 20.5% lower than SMG-HJLTFET and Si-JLTFET, respectively, thereby making it suitable for low-power distortion-free wireless communication systems.