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The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers
- Source :
- Journal of Physics D: Applied Physics. 42:235104
- Publication Year :
- 2009
- Publisher :
- IOP Publishing, 2009.
-
Abstract
- Two emission peaks were observed in the low temperature photoluminescence (LTPL) spectra of an InGaN/GaN multiple quantum well (MQW) structure before and after nanopillar fabrication. After nanopillar fabrication it is found that among the two peaks the longer wavelength peak exhibits a clear blue shift and has a much stronger enhancement in LTPL intensity than the shorter one. Combined with x-ray diffraction and spatially resolved cathodoluminescence analyses, the difference induced by nanopillar fabrication is ascribed to different strain relaxation states in the lower and upper quantum well layers. It is found that the lower QW layers of the as-grown MQW which causes the longer wavelength PL peak are more strained, while the upper ones are almost fully strain-relaxed. Therefore, the nanopillar fabrication induces much less strain relaxation in the upper part of the MQW than in the lower one.
- Subjects :
- Photoluminescence
Materials science
Acoustics and Ultrasonics
business.industry
Relaxation (NMR)
Cathodoluminescence
Gallium nitride
Condensed Matter Physics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Blueshift
chemistry.chemical_compound
chemistry
Stress relaxation
Optoelectronics
business
Quantum well
Nanopillar
Subjects
Details
- ISSN :
- 13616463 and 00223727
- Volume :
- 42
- Database :
- OpenAIRE
- Journal :
- Journal of Physics D: Applied Physics
- Accession number :
- edsair.doi...........9cd8a9e309cf09f0c3149f0e296f33e5