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Aging-Aware Gate-Level Modeling for Circuit Reliability Analysis
- Source :
- IEEE Transactions on Electron Devices. 68:4201-4207
- Publication Year :
- 2021
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2021.
-
Abstract
- Due to severer transistor aging at nanoscale, circuit design margin becomes extremely tight for advanced technology nodes. Thus, reliability-aware circuit design is urgently needed. In this article, a new framework to perform aging-aware static timing analysis (STA) is presented for reliability analysis. The key parts of aging-aware STA flows are workload analysis and aged delay/transition calculation. For the workload analysis, a new analytical stress probability (SP) calculation model is proposed, which considers the floating effect and signal correlations. For aged delay/transition calculation, a new aging-aware model is developed, which is accessible to large industrial libraries. The results show that the proposed model achieves high accuracy in the degradation estimation and aged-path-delay calculation. Due to its high accuracy and scalability, the proposed framework is a promising solution that is compatible with commercial Electronic Design Automation (EDA) tools.
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 68
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........9e2de172f165729e4c80d7a3082f2577
- Full Text :
- https://doi.org/10.1109/ted.2021.3096171