High-voltage super-junction lateral double-diffused metal—oxide semiconductor with a partial lightly doped pillar

A novel super-junction lateral double-diffused metal—oxide semiconductor (SJ-LDMOS) with a partial lightly doped P pillar (PD) is proposed. Firstly, the reduction in the partial P pillar charges ensures the charge balance and suppresses the substrate-assisted depletion effect. Secondly, the new electric field peak produced by the P/P− junction modulates the surface electric field distribution. Both of these result in a high breakdown voltage (BV). In addition, due to the same conduction paths, the specific on-resistance (Ron,sp) of the PD SJ-LDMOS is approximately identical to the conventional SJ-LDMOS. Simulation results indicate that the average value of the surface lateral electric field of the PD SJ-LDMOS reaches 20 V/μm at a 15 μm drift length, resulting in a BV of 300 V.