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Improvement of the stability of an electric double-layer transistor using a 1H,1H,2H,2H-perfluorodecyltriethoxysilane barrier layer
- Source :
- Japanese Journal of Applied Physics. 58:040907
- Publication Year :
- 2019
- Publisher :
- IOP Publishing, 2019.
-
Abstract
- Electric double-layer transistors (EDLTs) are capable of achieving ultra-high carrier density and very low operating voltages. However, chemical reactions cause structural change at the semiconductor–insulator interface resulting in unstable device operation and reduced device lifetime. In this work we propose a method of depositing a 1H,1H,2H,2H-perfluorodecyltriethoxysilane (FDTS) layer which acts as a barrier between the semiconductor layer and the ionic liquid insulator. Our work shows that the effects of adding FDTS film are isolation of the chemical reaction and reduction of damage to the amorphous InGaZnO channel, thus achieving the effect of increasing device lifetime and stability.
- Subjects :
- Materials science
Physics and Astronomy (miscellaneous)
business.industry
Transistor
General Engineering
General Physics and Astronomy
Insulator (electricity)
Chemical reaction
Amorphous solid
law.invention
Barrier layer
chemistry.chemical_compound
Semiconductor
chemistry
law
Ionic liquid
Optoelectronics
business
Voltage
Subjects
Details
- ISSN :
- 13474065 and 00214922
- Volume :
- 58
- Database :
- OpenAIRE
- Journal :
- Japanese Journal of Applied Physics
- Accession number :
- edsair.doi...........be425673c29d42d0d19ef21e6ed2770e
- Full Text :
- https://doi.org/10.7567/1347-4065/ab008c