Characterization of the radiation-enhanced diffusion of dry-etch damage in n-GaAs

Radiation-enhanced diffusion of dry-etch damage observed from experiments has been further characterized with Schottky diodes and deep level transient spectroscopy (DLTS) measurements. The use of DLTS spectra to monitor the effects of changes in ion dose rate and the application of laser radiation shows that the ion-induced defects having high diffusivities during ion-assisted processes are basically associated with the components of primary point defects, such as interstitials and vacancies. The properties of ion-induced traps obtained from DLTS measurements may provide us with some information to refine our model on the low-energy ion-induced damage.