Structural characterization of ordered SiGe films grown on Ge(100) and Si(100) substrates

We observe the formation of an ordered structure in Si1−xGex films grown on Ge(100) substrates, as well as on Si(100) substrates, by molecular beam epitaxy. The structural characterization of these ordered films is performed. The degree of order in the films is quantitatively measured using x‐ray diffraction. The dependence of the degree of order on Ge composition is similar between films on Ge(100) and Si(100) substrates. By careful x‐ray diffraction analysis, we find that the degree of order is not equivalent in variants.