Enhancement of growth rate due to tin doping in GaAs epilayer grown by low pressure metal‐organic chemical vapor deposition

Tetraethyltin is used as an n‐type dopant in homoepitaxially growing GaAs films from triethylgallium and arsine vapor in a low pressure system. The experimental data show that the growth rate can be enhanced by tin doping. It is found that the deep level transient spectroscopy concentration of the electron trap located at about 0.8 eV below the conduction band is suppressed by Sn doping. Gallium vacancy may be attributed to the trap. A growth model has been proposed, which can be substantiated by the experimental results.