Doped SiO2deposition from TMP in APCVD

In this work we have investigated the feasibility of atmospheric pressure chemical vapor deposition of phosphorus and boron doped silicon oxides from a liquid source—namely TMP (tri-methyl-phosphite)—an alternative to phosphine as a P dopant source'. The most important results on process characterization, dopant incorporation, and film properties are presented. In addition to the easy operation of the liquid source, a remarkable improvement in step coverage has been found, in comparison with PSG deposition from conventional silane and phosphine chemistry.