Unique degradation under AC stress in high-mobility amorphous In–W–Zn–O thin-film transistors

Subjects

Subjects :

Stress (mechanics)
Impact ionization
Reliability (semiconductor)
Materials science
Oxide semiconductor
business.industry
Thin-film transistor
General Engineering
General Physics and Astronomy
Optoelectronics
Degradation (geology)
business
Amorphous solid

Details

ISSN :

18820786 and 18820778

Volume :

13

Database :

OpenAIRE

Journal :

Applied Physics Express

Accession number :

edsair.doi...........ea419c69b396e86df4a10c21d759cb19

Full Text :

https://doi.org/10.35848/1882-0786/ab88c5