Back to Search
Start Over
Solution for high-performance Schottky-source/drain MOSFETs: Schottky barrier height engineering with dopant segregation technique
- Source :
- Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..
- Publication Year :
- 2004
- Publisher :
- IEEE, 2004.
-
Abstract
- A novel approach for achieving high-performance Schottky-source/drain MOSFETs (SBTs: Schottky Barrier Transistors) is proposed. The dopant segregation (DS) technique is employed and significant modulation of Schottky barrier height is demonstrated. The DS-SBT fabricated with the current CoSi/sub 2/ process show competitive drive current and better short-channel-effect immunity compared to the conventional MOSFET. In conclusion the DS-Schottky junction is useful for the source/drain of advanced MOSFETs.
Details
- Database :
- OpenAIRE
- Journal :
- Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.
- Accession number :
- edsair.doi...........ed4f319f0b3ebb47bfda28ea55a6c544
- Full Text :
- https://doi.org/10.1109/vlsit.2004.1345459