Effect of oxide layer growth conditions on radiation detection performance of Ni/SiO2/epi-4H-SiC MOS capacitors

Subjects

Subjects :

Inorganic Chemistry
Materials Chemistry
Condensed Matter Physics

Details

ISSN :

00220248

Volume :

584

Database :

OpenAIRE

Journal :

Journal of Crystal Growth

Accession number :

edsair.doi...........f7c925a7f5e9c777a83379256920c7b7

Full Text :

https://doi.org/10.1016/j.jcrysgro.2022.126566