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Unified physical DC model of staggered amorphous InGaZnO transistors
- Source :
- IEEE Transactions on Electron Devices, 64(3):7820165, 1076-1082. Institute of Electrical and Electronics Engineers
- Publication Year :
- 2017
-
Abstract
- In this paper, we propose a unified physical model of InGaZnO [amorphous indium–gallium–zinc-oxide (a-IGZO)] thin-film transistors (TFTs) accounting for both charge injection at the contact and charge transport within the channel. We extract the current-voltage characteristics of the injecting contact from the measurements of a-IGZO TFTs fabricated on plastic foil. We show that the charge injection depends on both the drain and the gate voltages. We model the charge injection in staggered a-IGZO TFTs basing on the thermionic emission–diffusion theory including the charge carrier-dependent electron velocity due to the trap states in the subgap of the a-IGZO semiconductor. Combining the charge injection model with a charge transport model, we accurately and consistently describe the measurements of staggered a-IGZO TFTs with channel-length scaling from $200~\mu m$ to $15~\mu m$ . The proposed unified model is implemented in a circuit simulator and used to design unipolar inverters. The good agreement between simulations and measurements of the inverters further confirms the effectiveness of the proposed approach.
- Subjects :
- a-IGZO thin-film transistors (TFTs)
analytical model
physical model
TFT
unipolar inverter
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Materials science
Thermionic emission
02 engineering and technology
01 natural sciences
law.invention
law
0103 physical sciences
Electronic
Optical and Magnetic Materials
010302 applied physics
business.industry
Transistor
Electrical engineering
Charge (physics)
021001 nanoscience & nanotechnology
Amorphous solid
Semiconductor
Thin-film transistor
Logic gate
Optoelectronics
0210 nano-technology
business
Voltage
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 64
- Issue :
- 3
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi.dedup.....3046323ae533c8e95a256389941f7217