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Molecular beam epitaxial growth of scandium nitride on hexagonal SiC, GaN, and AlN
- Source :
- Applied Physics Letters. 115:172101
- Publication Year :
- 2019
- Publisher :
- AIP Publishing, 2019.
-
Abstract
- RF plasma assisted MBE growth of scandium nitride (ScN) thin films on Ga-polar GaN (0001)/SiC, Al-polar AlN (0001)/Al2O3, and Si-face 6H-SiC (0001) hexagonal substrates is found to lead to a face centered cubic (rock salt) crystal structure with (111) out-of-plane orientation instead of hexagonal orientation. Cubic (111) twinned patterns in ScN are observed by in situ electron diffraction during epitaxy, and the twin domains in ScN are detected by electron backscattered diffraction and further corroborated by X-ray diffraction. The epitaxial ScN films display very smooth, subnanometer surface roughness at a growth temperature of 750 °C. Temperature-dependent Hall-effect measurements indicate a constant high n-type carrier concentration of ∼1 × 1020/cm3 and an electron mobility of ∼20 cm2/V s.
- Subjects :
- 010302 applied physics
Diffraction
Condensed Matter - Materials Science
Electron mobility
Materials science
Physics and Astronomy (miscellaneous)
Materials Science (cond-mat.mtrl-sci)
FOS: Physical sciences
02 engineering and technology
Crystal structure
Cubic crystal system
021001 nanoscience & nanotechnology
Epitaxy
01 natural sciences
Crystallography
Electron diffraction
0103 physical sciences
Surface roughness
Thin film
0210 nano-technology
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 115
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi.dedup.....4191db372d458ea1280ce792aeec4cc1