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On the correlation between SILC and hole fluence throughout the oxide
- Source :
- Microelectronics Reliability. 39:197-201
- Publication Year :
- 1999
- Publisher :
- Elsevier BV, 1999.
-
Abstract
- Stress-induced leakage current (SILC) has been recognized as a topic of concern in flash memory reliability. It is a reliable failure mechanism, occurring long before oxide breakdown and, hence, limiting oxide lifetime [1] . The physical origin and mechanisms of SILC have not yet been clearly understood and several points open to discussion remain. In this work the role of oxide hole fluence in producing the SILC is discussed. An universal power law of SILC generation kinetics is proposed versus the hole fluence throughout the oxide. The experimental results are theoretically validated by modeling the measured quantum-yield by the contributions of both anode hole injection and electron valence band injection mechanisms.
- Subjects :
- Electron density
Condensed matter physics
Chemistry
MOSFET
silc
Electrical Stress
Analytical chemistry
Oxide
Condensed Matter Physics
Fluence
Atomic and Molecular Physics, and Optics
Flash memory
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Anode
Impact ionization
chemistry.chemical_compound
SILC
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Valence electron
Subjects
Details
- ISSN :
- 00262714
- Volume :
- 39
- Database :
- OpenAIRE
- Journal :
- Microelectronics Reliability
- Accession number :
- edsair.doi.dedup.....a7e7ce402a8cc9f8458580933bd36dbb