Back to Search Start Over

Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM

Authors :
Daniele Ielmini
Carlo Cagli
Federico Nardi
Source :
IEEE Transactions on Electron Devices. 58:3246-3253
Publication Year :
2011
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2011.

Abstract

Set and reset characteristics are studied for unipolar and bipolar metal-oxide resistive-switching memory devices. We show a universal dependence of set-state resistance and reset current on the compliance current used during set, with negligible impact of metal-oxide composition and switching condition. An analytical Joule-heating model for universal reset is presented, predicting a weak dependence of reset temperature and voltage on diffusion and migration parameters in both unipolar- and bipolar-switching modes. Data for the reset voltage are shown for a wide range of unipolar and bipolar metal oxides, in support of our calculations.

Details

ISSN :
15579646 and 00189383
Volume :
58
Database :
OpenAIRE
Journal :
IEEE Transactions on Electron Devices
Accession number :
edsair.doi.dedup.....ec0a7cf25c2e6e1b50ce4824e87e6396
Full Text :
https://doi.org/10.1109/ted.2011.2161088