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Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM
- Source :
- IEEE Transactions on Electron Devices. 58:3246-3253
- Publication Year :
- 2011
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2011.
-
Abstract
- Set and reset characteristics are studied for unipolar and bipolar metal-oxide resistive-switching memory devices. We show a universal dependence of set-state resistance and reset current on the compliance current used during set, with negligible impact of metal-oxide composition and switching condition. An analytical Joule-heating model for universal reset is presented, predicting a weak dependence of reset temperature and voltage on diffusion and migration parameters in both unipolar- and bipolar-switching modes. Data for the reset voltage are shown for a wide range of unipolar and bipolar metal oxides, in support of our calculations.
- Subjects :
- Materials science
sezele
business.industry
Oxide
Electrical engineering
Integrated circuit
Electronic, Optical and Magnetic Materials
Resistive random-access memory
law.invention
Non-volatile memory
chemistry.chemical_compound
chemistry
law
Optoelectronics
Memory modeling
Electrical and Electronic Engineering
Diffusion (business)
business
Reset (computing)
Voltage
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 58
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi.dedup.....ec0a7cf25c2e6e1b50ce4824e87e6396
- Full Text :
- https://doi.org/10.1109/ted.2011.2161088