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Deep Levels Characterization by Means of Drain Current Transient in AlGaN/GaN HEMT Devices

Authors :
Bisi, Davide
Stocco, Antonio
Rampazzo, Fabiana
Meneghini, Matteo
Meneghesso, Gaudenzio
Zanoni, Enrico
Dammann, M.
Brückner, P.
Mikulla, M.
Publication Year :
2013

Subjects

Subjects :
Gallium Nitride
Charge Trapping
HEMT
parassitic

Details

Language :
English
Database :
OpenAIRE
Accession number :
edsair.od......3657..71182c142a85bfeeb3d11bd74c5d051d

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Authors Abstract Subjects Details