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Characterization of 0.25 um and 0.5 um AlGaN/GaN HEMT Devices forHigh Power Switching Applications

Authors :
Pirola, M
Camarchia, V
Quaglia, R
Ciccognani, W
Limiti, E
Ayllon, N
Publication Year :
2014

Subjects

Subjects :
Settore ING-INF/01 - Elettronica

Details

Language :
English
Database :
OpenAIRE
Accession number :
edsair.od......3667..4c0f38039e2b5c4a7cf5a588189072f0

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Authors Abstract Subjects Details