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Quantifying Temperature-dependent Substrate Loss in GaN-on-Si RF Technology

Authors :
Chandrasekar, Hareesh
Uren, Michael J.
Casbon, Michael A.
Hirshy, Hassan
Eblabla, Abdalla
Elgaid, Khaled
Pomeroy, James W.
Tasker, Paul J.
Kuball, Martin
Source :
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 66, NO. 4, APRIL 2019
Publication Year :
2019

Abstract

Intrinsic limits to temperature-dependent substrate loss for GaN-on-Si technology, due to the change in resistivity of the substrate with temperature, are evaluated using an experimentally validated device simulation framework. Effect of room temperature substrate resistivity on temperature-dependent CPW line loss at various operating frequency bands are then presented. CPW lines for GaN-on-high resistivity Si are shown to have a pronounced temperature-dependence for temperatures above 150{\deg}C and have lower substrate losses for frequencies above the X-band. On the other hand, GaN-on-low resistivity Si is shown to be more temperature-insensitive and have lower substrate losses than even HR-Si for lower operating frequencies. The effect of various CPW geometries on substrate loss is also presented to generalize the discussion. These results are expected to act as a benchmark for temperature dependent substrate loss in GaN-on-Si RF technology.<br />Comment: 7 pages (double-column), 10 figures

Subjects

Subjects :
Physics - Applied Physics

Details

Database :
arXiv
Journal :
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 66, NO. 4, APRIL 2019
Publication Type :
Report
Accession number :
edsarx.1901.09521
Document Type :
Working Paper
Full Text :
https://doi.org/10.1109/TED.2019.2896156