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ReS2/h-BN/Graphene Heterostructure Based Multifunctional Devices: Tunnelling Diodes, FETs, Logic Gates & Memory
- Source :
- Advanced Electronic Materials, 2000925, 2020
- Publication Year :
- 2020
-
Abstract
- We investigate a two-dimensional (2D) heterostructure consisting of few-layer direct bandgap ReS2, a thin h-BN layer and a monolayer graphene for application to various electronic devices. Metal-insulator-semiconductor (MIS)-type devices with two-dimensional (2D) van-der-Waals (vdW) heterostructures have recently been studied as important components to realize various multifunctional device applications in analogue and digital electronics. The tunnel diodes of ReS2/h-BN/graphene exhibit light tuneable rectifying behaviours with low ideality factors and nearly temperature independent electrical characteristics. The devices behave like conventional MIS-type tunnel diodes for logic gate applications. Furthermore, similar vertical heterostructures are shown to operate in field effect transistors with a low threshold voltage and a memory device with a large memory gate for future multifunctional device applications.<br />Comment: 29 pages
Details
- Database :
- arXiv
- Journal :
- Advanced Electronic Materials, 2000925, 2020
- Publication Type :
- Report
- Accession number :
- edsarx.2012.03219
- Document Type :
- Working Paper
- Full Text :
- https://doi.org/10.1002/aelm.202000925