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Direct extraction techniques of microwave small-signal model and technological parameters for sub-quarter micron SOI MOSFETs
- Source :
- Journal of Telecommunications and Information Technology, Iss 3-4 (2000)
- Publication Year :
- 2000
- Publisher :
- National Institute of Telecommunications, 2000.
-
Abstract
- Original extraction techniques of microwave small-signal model and technological parameters for SOI MOSFETs are presented. The characterization method combines careful design of probing and calibration structures, rigorous in situ calibration and a powerful direct extraction method. The proposed characterization procedure is directly based on the physical meaning of each small-signal model element. Knowing the qualitative small-signal behavior of each model parameter versus bias conditions, the high frequency equivalent circuit can be simplified for extraction purposes. Biasing MOSFETs under depletion, strong inversion and saturation conditions, certain technological parameters and microwave small-signal elements can be extracted directly from the measured S-parameters. These new extraction techniques allow us to understand deeply the behavior of the sub-quarter micron SOI MOSFETs in microwave domain and to control their fabrication process
Details
- Language :
- English
- ISSN :
- 15094553 and 18998852
- Issue :
- 3-4
- Database :
- Directory of Open Access Journals
- Journal :
- Journal of Telecommunications and Information Technology
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.fee7bb09a76947f3966fb012a229ea10
- Document Type :
- article
- Full Text :
- https://doi.org/10.26636/jtit.2000.3-4.27