In-plane electrical transport in n-type selectively doped GaSb/AlGaSb multiquantum wells

Authors :: Ghezzi, C.
Cioce, B.
Magnanini, R.
Parisini, A.
Chalmers, J.M.
Turin, L.
Everall, N.J.
Source :: Journal of Applied Physics. Nov 15, 2001, Vol. 90 Issue 10, 5166-5170
Publication Year :: 2001
Abstract: Reports regarding in-plane electrical transport in n-type selectively doped GaSb/AlGaSb multiquantum wells are discussed. Acceptable values of delta were obtained, consistent with results of structural investigations in single quantum well samples of GaSb/Al(sub 0.40)Ga(sub 0.60)Sb.

Subjects :: Aluminum -- Research
Aluminum -- Electric properties
Antimony -- Research
Antimony -- Electric properties
Gallium -- Research
Gallium -- Electric properties
Quantum wells -- Research
Physics

Tools