Structure and crystallization of low-pressure chemical vapor deposited silicon films using Si2H6 gas

Transmission electron microscopy and x-ray diffraction were used to analyze the structure and crystallization of low- pressure chemical vapor deposited silicon films. The results showed that the transition deposition temperature from amorphous to polycrystalline film was at580 degrees celsius. Diffraction analysis showed that the structural disorder to amorphously deposited films increased as the deposition temperature became higher. Film grain sizes were determined by both the deposition temperature andrate.