Study of the drain leakage current in bottom-gated nanocrystalline silicon thin-film transistors by conduction and low frequency noise measurements

The conduction mechanisms of the leakage current in n-channel bottom-gated nanocrystalline silicon nc-Si TFTs are identified by conduction measurements. Results show that the leakage current is due to Poole-Frenkel emission at low electric fields and band-to-band tunneling at large electrical fields.