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Threshold voltage variation in SOI Schottky-barrier MOSFETs
- Source :
- IEEE Transactions on Electron Devices. March, 2008, Vol. 55 Issue 3, p858, 8 p.
- Publication Year :
- 2008
-
Abstract
- The threshold voltage variation in Schottky-barrier (SB) MOSFETs with different geometric parameters as well as devices with dopant segregation is examined. A multigate structure has suppressed the threshold voltage variation by improving carrier injection by reducing its sensitivity to the SB height inhomogeneity.
- Subjects :
- Voltage -- Measurement
Metal oxide semiconductor field effect transistors -- Design and construction
Metal oxide semiconductor field effect transistors -- Analysis
Silicon-on-isolator -- Design and construction
Silicon-on-isolator -- Electric properties
Business
Electronics
Electronics and electrical industries
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 55
- Issue :
- 3
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.176716945