Mechanism of the formation of hydrogen-induced interface states for Pt/silicon oxide/Si metal-oxide-semiconductor tunneling diodes

Authors :: Kobayashi, H.
Iwadate, H.
Kogetsu, Y.
Nakato, Y.
Source :: Journal of Applied Physics. Dec 1, 1995, Vol. 78 Issue 11, p6554, 8 p.
Publication Year :: 1995

Subjects :: Metal oxide semiconductors -- Research
Tunnel diodes -- Research
Semiconductor-metal boundaries -- Research
X-ray spectroscopy -- Usage
Physics

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