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Vertical InAs nanowire wrap gate transistors on Si substrates

Authors :
Rehnstedt, Carl
Martensson, Thomas
Thelander, Claes
Samuelson, Lars
Wernersson, Lars-Erik
Source :
IEEE Transactions on Electron Devices. Nov, 2008, Vol. 55 Issue 11, p3037, 5 p.
Publication Year :
2008

Abstract

The characteristics and operation of an InAs enhancement-mode field-effect transistors integrated directly on Si substrates is reported. The temperature-dependent measurements revealed activation energy of about 200 meV for the InAs/Si conduction band offset.

Subjects

Subjects :
Chemical vapor deposition -- Methods
Field-effect transistors -- Structure
Field-effect transistors -- Electric properties
Field-effect transistors -- Growth
Company growth
Business
Electronics
Electronics and electrical industries

Details

Language :
English
ISSN :
00189383
Volume :
55
Issue :
11
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.192330098

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