CMOS active pixel image sensors fabricated using a 1.8-V, 0.25-micron CMOS technology

An analysis of the experimental results in the fabrication of complementary metal oxide semiconductor (CMOS) active pixel image sensors was presented. The CMOS technology, which was employed on the construction of the pixel sensors, was not modified to determine the impact of device scaling on the image sensing performance. The analysis revealed that the rise and fall transition times of output signal were long but the basic operations of the pixels were unaffected.