Two-channel AlGaN/GaN heterostructure field effect transistor for high power applications

A double-channel AlGaN/GaN heterostructure field-effect transistor (HFET) was proposed for high power applications, where the bottom channel was formed by a GaN/AlGaN/GaN semiconductor-insulator-semiconductor structure. Charge distribution and the band structure were strongly affected by the piezoelectric effect caused by the mismatch between AlGaN and GaN. This design demonstrated that the carrying capability of AlGaN/GaN HFETs can be enhanced using multichannel structures.