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Closed-loop bias voltage control for plasma etching
- Source :
- Solid State Technology. February, 2000, Vol. 43 Issue 2, p59
- Publication Year :
- 2000
-
Abstract
- The stated goal for high-density etchers of completely decoupling plasma generation from ion energy control cannot be achieved with conventional methods of monitoring RF power delivery. By using a closed-loop […]
Details
- Language :
- English
- ISSN :
- 0038111X
- Volume :
- 43
- Issue :
- 2
- Database :
- Gale General OneFile
- Journal :
- Solid State Technology
- Publication Type :
- Periodical
- Accession number :
- edsgcl.60111270