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High 2DEG mobility of HEMT structures grown on 100 mm SI 4H-SiC substrates by hot-wall MOCVD
High 2DEG mobility of HEMT structures grown on 100 mm SI 4H-SiC substrates by hot-wall MOCVD
- Publication Year :
- 2007
Details
- Database :
- OAIster
- Notes :
- English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1234100474
- Document Type :
- Electronic Resource