Experimental Characterization of the Fully Integrated Si-GaN Cascoded FET

In this paper, fabrication process of the fully integrated Si-GaN cascoded field effect transistor is presented first. Device performance of the individual Si MOSFET and AlGaN/GaN MIS-HEMT, which are fabricated along with the Si-GaN cascoded FET, are then characterized. Finally, the device performance of the fully integrated cascoded FET is characterized in detail, including the transconductance compression at high VGS and high VDS, the reverse conduction, the power figure-of-merit (FOM), and the high-Temperature characteristics. It is shown that the Si-GaN monolithic cascoded FET is a promising candidate for high performance power switching applications. © 2018 IEEE.