1. The effect of a smart body tie on the bottom-gate thin film transistor
- Author
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Lin, Jyi-Tsong, Huang, Kuo-Dong, and Hu, Shu-Fen
- Subjects
- *
THIN film transistors , *THIN film devices , *TRANSISTORS , *ELECTRONICS , *SEMICONDUCTORS - Abstract
Abstract: This paper investigates the effects of a smart body tie on the bottom-gate polycrystalline silicon thin film transistor (TFT). The smart body tie TFT has been fabricated and exhibits the superior electrical characteristics, though it involves only a minor modification to the conventional bottom-gate TFT. The results show that the OFF-state leakage of the proposed TFT is reduced by about 70% as compared to a conventional TFT. The drain induced barrier lowing (DIBL) and the subthreshold factor are also improved. The output characteristics are also improved, as the proposed structure does not exhibit a significant kink effect. [Copyright &y& Elsevier]
- Published
- 2008
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