1. Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode.
- Author
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Baikui Li, Xi Tang, and Chen, Kevin J.
- Subjects
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OPTICAL pumping , *ALUMINUM gallium nitride , *LIGHT emitting diodes , *ELECTRON mobility , *THRESHOLD voltage - Abstract
In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoHLED) which is seamlessly integrated with the AlGaN/GaN high electron mobility transistor (HEMT), we studied the effect of on-chip light illumination on the de-trapping processes of electrons from both surface and bulk traps. Surface trapping was generated by applying OFF-state drain bias stress, while bulk trapping was generated by applying positive substrate bias stress. The detrapping processes of surface and/or bulk traps were monitored by measuring the recovery of dynamic on-resistance Ron and/or threshold voltage Vth of the HEMT. The results show that the recovery processes of both dynamic Ron and threshold voltage Vth of the HEMT can be accelerated by the on-chip SoH-LED light illumination, demonstrating the potentiality of on-chip hybrid opto-HEMTs to minimize the influences of traps during dynamic operation of AlGaN/GaN power HEMTs. [ABSTRACT FROM AUTHOR]
- Published
- 2015
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