1. High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer.
- Author
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Kalarickal, Nidhin Kurian, Xia, Zhanbo, McGlone, Joe F., Liu, Yumo, Moore, Wyatt, Arehart, Aaron R., Ringel, Steven A., and Rajan, Siddharth
- Subjects
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TWO-dimensional electron gas , *CAPACITANCE measurement , *ELECTRON density , *ELECTRIC potential measurement , *LOW temperatures , *ELECTRON gas - Abstract
This report discusses the design and demonstration of β -(Al0.17Ga0.83)2O3/Ga2O3 modulation doped heterostructures to achieve high sheet charge density. The use of a thin spacer layer between the Si delta-doping and the heterojunction interface was investigated in a β -(AlGa)2O3/Ga2O3 modulation doped structure. It is shown that this strategy enables a higher two-dimensional electron gas (2DEG) sheet charge density up to 4.7 × 1012 cm−2 with an effective mobility of 150 cm2/V s. The presence of a degenerate 2DEG channel was confirmed by the measurement of a low temperature effective mobility of 375 cm2/V s and the lack of carrier freeze out from low temperature capacitance voltage measurements. The electron density of 4.7 × 1012 cm−2 is the highest reported 2DEG density obtained without parallel conducting channels in a β -(AlxGa(1−x))2O3/Ga2O3 heterostructure system. [ABSTRACT FROM AUTHOR]
- Published
- 2020
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