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1. Composition influence on the physical and electrical properties of SrxTi1-xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes.

2. P[sub b]-type interface defects in (100)Si/SiO[sub 2] structures grown in ozonated water solution.

8. Alternative high-k dielectrics for semiconductor applications.

9. ANNEALING INDUCED DEGRADATION OF THERMAL SiO 2 ON (1 0 0)Si: POINT DEFECT GENERATION.

10. Influence of in situ applied stress during thermal oxidation of (111)Si on P[sub b] interface defects.

11. Characterization of S centers generated by thermal degradation in SiO[sub 2] on (100)Si.

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