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The influence of silicon nanocrystal (nc-Si) distributed in the gate oxide on the capacitance is studied for the circumstances that the nc-Si does not form conductive percolation tunneling paths connecting the gate to the substrate, by synthesizing the nc-Si by Si-ion implantation. An excellent agreement is achieved between the MOS capacitance from the modeling and capacitance measurements for several samples, and the influence of implantation energy and implantation dosage on MOS capacitance is studied.

A new value for the proton affinity of C3H6 is offered. The calculation was obtained by pulsed field ionization-photoelectron photoion coincidence spectroscopy.

A new Gaussian-2 method incorporating the energy correction due to spin contamination has been used in studying the structures and energetics of C2H2N and C(sub 2)H(sub 2)N(super +) isomers. The heat of reaction(sub f298) obtained with the new technique shows good agreement with existing data. However, the results for CH2NC and CH(sub 2)NC(super +) as well as for c-NCHCH and c-NCHCH+ do not agree with available experimental data. CH2NC may be the product of the reaction between the nitrogen atom and the vinyl radical based on the ionization energies of the C2H2N isomers.

The Gaussian-2, G2 and G2(MP2) ab initio quantum chemical calculations are suitable for obtaining energy values with 4-5 kcal/mol accuracy for complex sulphur-containing molecular moieties. The stabilities of closed shell molecular species is responsible for the irregular values obtained for various bond dissociation energies. The experimental technique of the calculation is discussed.

A nanocrystal Si (nc-Si) distributed in a narrow layer in the gate oxide close to the gate is synthesized with Si ion implantation and the electrical characteristics of the nc-Si structure are examined. A steplike flatband voltage shift as a function of changing voltage is observed, indicating single electron or hole trapping in the nc-Si at room temperature, whereas the nc-Si structure has shown good charge-retention characteristics.

Different distributions of Si nanocrystals (nc-Si) in the gate oxide of Al/nc-Si embedded Si[O.sub.2]/p-Si diodes are prepared with Si ion implantation method and the current conduction in the diodes with different nc-Si distributions is examined. The studies have shown that the enhancement in the current conduction is due to the formation of many percolative conduction paths by the nc-Si connecting the gate to the Si substrate.

The collision-induced dissociation (CID) reaction of CH3SCH3(super +) is investigated in a triple-quadrupole, double-ocotpole ion-molecule reaction mechanism. The high generation of CH3S(super +) + CH3 is due to the characteristic translational-to-vibrational energy transfer for the C - S stretching modes with lower frequencies.

The vacuum ultraviolet pulsed field ionization-photoelectron (PFI-PE) spectra for CS2 are measured in full energy range of 12.6-13.5 eV, revealing complex vibronic band structures for the CS2(super +)[A~(super 2)pi(sub u)] state. Three dimensional potential energy functions for CS2 (super +1)[A~(super 2)pi(sub u)] are also generated theoretically.